Dependence of Barrier Height of Metal Semiconductor Contact (Au–GaAs) on Thickness of Semiconductor Surface Layer
- 1 April 1972
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (4) , 1980-1982
- https://doi.org/10.1063/1.1661426
Abstract
In this work it is experimentally shown that the apparent potential barrier height at a metal-semiconductor interface (Au–GaAs) is related to the thickness of the semiconductor surface ``oxide films''. The barrier height was measured by capacitance-voltage and photoelectric techniques. The surface layer seems to behave approximately as described by Cowley and Sze, and can account for a variation from 0.82 to 1.08 eV in measured effective barrier height. However, for a more complete explanation of the experimental results it seems likely that additional parameters, such as charge, surface states, and band structure in the surface layer, will have to be taken into account.This publication has 5 references indexed in Scilit:
- On the potential barrier shape in Al–Al2O3–Al tunnel junctionsSolid-State Electronics, 1969
- THE EFFECT OF TRAPPING STATES ON TUNNELING IN METAL-SEMICONDUCTOR JUNCTIONSApplied Physics Letters, 1969
- Metal-semiconductor surface barriersSolid-State Electronics, 1966
- Experimental Study of Gold-Gallium Arsenide Schottky BarriersJournal of Applied Physics, 1965
- Surface States and Barrier Height of Metal-Semiconductor SystemsJournal of Applied Physics, 1965