Very low threshold InGaAsP mesa laser
Open Access
- 1 May 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 19 (5) , 783-785
- https://doi.org/10.1109/jqe.1983.1071930
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
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- A novel technique for GaInAsP/InP buried heterostructure laser fabricationApplied Physics Letters, 1982
- Optically induced catastrophic degradation in InGaAsP/InP layersApplied Physics Letters, 1982
- Electrical derivative characteristics of InGaAsP buried heterostructure lasersJournal of Applied Physics, 1982
- CW electrooptical properties of InGaAsP(λ = 1.3 µm) buried-heterostructure lasersIEEE Journal of Quantum Electronics, 1981
- Facet degradation of InGaAsP/InP double-heterostructure lasersApplied Physics Letters, 1980