Refractive indices of III–V compounds: Key properties of InGaAsP relevant to device design
- 1 August 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (8) , 5863-5869
- https://doi.org/10.1063/1.331425
Abstract
A method for calculation of refractive indices in III–V compounds at energies below the direct band edge is presented. Spectral dependence of the refractive-index data is analyzed on the basis of simplified models of the interband transitions. The theoretical prediction shows a quite good agreement with the experimental data of III–V binaries. This model is also applied to InGaAsP quaternaries lattice matched to InP. The refractive-index steps between InGaAsP and InP are obtained for a variety of waveguiding device applications.This publication has 20 references indexed in Scilit:
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