Tin diffusion and segregation in GaAs processed with a pulsed ruby laser
- 15 October 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (8) , 3832-3837
- https://doi.org/10.1063/1.346267
Abstract
Tin-diffused GaAs layer samples, with mean concentrations larger than 1019 cm−3, were obtained by irradiating with a ruby laser GaAs substrates covered with thin tin layers. Mobilities between 100 and 200 cm2/V s were obtained. Both carrier concentration and mobility decrease with increasing energy density. Strong segregation effects were observed in the samples processed with large energy densities.This publication has 6 references indexed in Scilit:
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