Efficient GaAs solar cells formed by UV laser chemical doping
- 15 April 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (8) , 722-724
- https://doi.org/10.1063/1.93204
Abstract
ArF and XeF excimer laser radiation has been used to form p-n junctions in GaAs. The laser releases S atoms by the dissociation of H2S gas and simultaneously heats the substrate to allow incorporation of the S dopant. Solar cells having AM1 efficiencies of 10.8% have been fabricated from these junctions. The process can also produce doped GaAs layers with sheet resistances as low as 30 Ω/⧠.Keywords
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