Vertically-Stacked InAs Islands Between GaAs Barriers Grown by Chemical Beam Epitaxy

This publication has 17 references indexed in Scilit:

• Ultranarrow Luminescence Lines from Single Quantum Dots
  Physical Review Letters, 1995
• Structural characterization of (In,Ga)As quantum dots in a GaAs matrix
  Physical Review B, 1995
• Visible photoluminescence from N-dot ensembles and the linewidth of ultrasmall ${\mathrm{Al}}_{\mathit{y}}$${\mathrm{In}}_{1\mathrm{-}\mathit{y}}$As/${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathit{x}}$As quantum dots
  Physical Review B, 1994
• Highly uniform InGaAs/GaAs quantum dots (∼15 nm) by metalorganic chemical vapor deposition
  Applied Physics Letters, 1994
• Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs
  Physical Review Letters, 1994
• Self-organized growth of strained InGaAs quantum disks
  Nature, 1994
• Self-organized growth of regular nanometer-scale InAs dots on GaAs
  Applied Physics Letters, 1994
• Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces
  Applied Physics Letters, 1993
• Quantum Wire Superlattices and Coupled Quantum Box Arrays: A Novel Method to Suppress Optical Phonon Scattering in Semiconductors
  Japanese Journal of Applied Physics, 1989
• Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlattices
  Applied Physics Letters, 1985