Synthesis and characterization of high quality ultrathin gate oxides for VLSI/ULSI circuits
- 6 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 714-717
- https://doi.org/10.1109/iedm.1988.32912
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Characterization of SI/SiO2 Interfaces Using Tem Lattice Imaging and X-Ray Micro Diffraction TechniquesMRS Proceedings, 1988
- The Deposition of Silicon Dioxide Films at Reduced PressureJournal of the Electrochemical Society, 1979