Optimization of sublimation growth of SiC bulk crystals using modeling
- 1 July 1999
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 61-62, 107-112
- https://doi.org/10.1016/s0921-5107(98)00456-5
Abstract
No abstract availableThis publication has 1 reference indexed in Scilit:
- Use of Ta-Container for Sublimation Growth and Doping of SiC Bulk Crystals and Epitaxial LayersPhysica Status Solidi (b), 1997