Etching of SiO2 and Si in a He-F2 plasma
- 1 May 1980
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (5) , 2510-2515
- https://doi.org/10.1063/1.327971
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- A comparative study of the radio frequency discharge in gas mixtures of helium with flourine, oxygen, nitrogen, and argonJournal of Applied Physics, 1980
- Reaction of fluorine atoms with SiO2Journal of Applied Physics, 1979
- Ion- and electron-assisted gas-surface chemistry—An important effect in plasma etchingJournal of Applied Physics, 1979
- Plasma etching—A discussion of mechanismsJournal of Vacuum Science and Technology, 1979
- The etching of silicon with XeF2 vaporApplied Physics Letters, 1979
- Some Chemical Aspects of the Fluorocarbon Plasma Etching of Silicon and Its CompoundsIBM Journal of Research and Development, 1979
- Plasma-Assisted Etching Techniques for Pattern DelineationPublished by Elsevier ,1978
- Reflection of Noble Gas Ions at Solid SurfacesPhysical Review B, 1961