A quantitative numerical model of multilayer vapor-deposited organic light emitting diodes

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Abstract
A one-dimensional numerical model for the quantitative simulation of multilayer organic light emitting diodes (OLEDs) is presented. It encompasses bipolar charge carrier drift with field-dependent mobilities and space charge effects, charge carrier diffusion, trapping, bulk and interface recombination, singlet exciton diffusion and quenching effects. Using field-dependent mobility data measured on unipolar single layer devices, reported energetic levels of highest occupied and lowest unoccupied molecular orbitals, and realistic assumptions for experimentally not direct accessible parameters, current density and luminance of state-of-the-art undoped vapor-deposited two- and three-layer OLEDs with maximum luminance exceeding 10000 cd/m2 were successfully simulated over 4 orders of magnitude. For an adequate description of these multilayer OLEDs with energetic barriers at interfaces between two adjacent organic layers, the model also includes a simple theory of charge carrier barrier crossing and recombination at organic–organic interfaces. The discrete nature of amorphous molecular organic solids is reflected in the model by a spatial discretization according to actual molecule monolayers, with hopping processes for charge carrier and energy transport between neighboring monolayers.