Phosphorus and nitrogen doping into polycrystalline SiC films prepared by plasma-enhanced chemical vapor deposition at 700 °C

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Abstract
Doped polycrystalline SiC films were deposited from a SiH4‐CH4‐H2‐(PH3 or N2) mixture by plasma‐enhanced chemical vapor deposition at 700 °C. The best crystallinity was obtained at x∼0.53 in Si1−xCx for both undoped and doped films. The crystallinity was enhanced by both P and N doping, but deteriorated again under high doping conditions. Also, better crystallinity was obtained by doping with P rather than N. Intrinsic tensile and compressive stresses were observed for P‐ and N‐doped films, respectively. The resistivity and dangling‐bond density decreased in correspondence to the enhancement in crystallinity. Origins of the dangling bonds and of a change in the crystallinity were discussed.