Crystal structure of Si1−xCx films by plasma-enhanced chemical vapor deposition at 700 °C
- 1 June 1991
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (11) , 7945-7947
- https://doi.org/10.1063/1.347490
Abstract
Using x‐ray diffraction and electron‐spin‐resonance measurements, the crystal structure and bonding configurations of Si1−xCx films by plasma‐enhanced chemical vapor deposition at 700 °C are shown to change abruptly at around x=0.5. At around this composition, a polycrystalline film with a cubic SiC 〈111〉 preferred orientation and an average grain size of 95 nm is grown on a fused silica substrate under high hydrogen dilution. The structural change can be attributed to an increase in the probability of occurrence of a Si‐ C4 tetrahedron in a chemically ordered network.This publication has 11 references indexed in Scilit:
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