Hall-Effect and Photoluminescence Measurements of Oxygen-Related Donors in CZ-Si Crystals
- 1 September 1980
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 19 (9) , L547-550
- https://doi.org/10.1143/jjap.19.l547
Abstract
Electronic states of oxygen-related donors in CZ-Si crystals induced by heat treatment at 430°C have been investigated by Hall-effect and photoluminescence measurements. A characteristic change in the ionization energies of such heat-treatment induced oxygen-related donors has been observed, suggesting the formation of several species of oxygen clusters distributed in CZ-Si crystals. Photoluminescence spectra related to these oxygen-related donors reveal some new features characteristic of the luminescence from excitons localized at impurity pairs or clusters.Keywords
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