HIGH-POWER AND HIGH-EFFICIENCY GaAs AVALANCHE DIODES
- 1 May 1969
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 14 (9) , 270-271
- https://doi.org/10.1063/1.1652808
Abstract
New high cw power and high-efficiency operations of GaAs avalanche diodes operating in the normal mode are reported. An output power of 500 mW (cw) at 11.1 GHz with an efficiency over 11.5% was obtained from a zinc-diffused GaAs diode. The diode was mounted junction side adjacent to the heat sink in a coaxial pin-type microwave package (Micro State Type 8).Keywords
This publication has 3 references indexed in Scilit:
- Microwave amplification with GaAs avalanche diodesElectronics Letters, 1968
- High-efficiency X-band GaAs IMPATT diodesIEEE Transactions on Electron Devices, 1968
- Characteristics of varactors biased into avalancheIEEE Transactions on Electron Devices, 1966