Improved performance of a field effect transistor
- 31 December 1990
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 8 (4) , 357-359
- https://doi.org/10.1016/0749-6036(90)90330-a
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Improved performance of a field effect transistorSuperlattices and Microstructures, 1990
- The influence of electric field and mobility profile on GaAs MESFET characteristicsIEEE Transactions on Electron Devices, 1989
- Analytic theory for current-voltage characteristics and field distribution of GaAs MESFET'sIEEE Transactions on Electron Devices, 1989
- Physical basis of short-channel MESFET operationIEEE Transactions on Electron Devices, 1979
- Finite-element simulation of GaAs MESFET's with lateral doping profiles and submicron gatesIEEE Transactions on Electron Devices, 1976
- Field distribution in junction field-effect transistors at large drain voltagesIEEE Transactions on Electron Devices, 1975