Current diffusion effects in titanium-N silicon schottky diodes
- 30 June 1974
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 17 (6) , 583-585
- https://doi.org/10.1016/0038-1101(74)90176-2
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Comments on the conduction mechanism in Schottky diodesJournal of Physics D: Applied Physics, 1972
- Recombination velocity effects on current diffusion and imref in schottky barriersSolid-State Electronics, 1971
- Reverse current-voltage characteristics of metal-silicide Schottky diodesSolid-State Electronics, 1970
- Effects of image force and tunneling on current transport in metal-semiconductor (Schottky barrier) contactsSolid-State Electronics, 1970
- Titanium-silicon Schottky barrier diodesSolid-State Electronics, 1970
- Thermionic emission in AuGaAs Schottky barriersSolid-State Electronics, 1968
- Current transport in metal-semiconductor barriersSolid-State Electronics, 1966
- The Richardson constant for thermionic emission in Schottky barrier diodesSolid-State Electronics, 1965