Titanium-silicon Schottky barrier diodes
- 30 April 1970
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 13 (4) , 403-414
- https://doi.org/10.1016/0038-1101(70)90151-6
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- p-n junction—Schottky barrier hybrid diodeIEEE Transactions on Electron Devices, 1969
- Shot noise in silicon Schottky barrier diodesIEEE Transactions on Electron Devices, 1968
- Surface Effects on Metal-Silicon ContactsJournal of Applied Physics, 1968
- Metal-silicon Schottky barriersSolid-State Electronics, 1968
- Silicon Schottky Barrier Diode with Near-Ideal I-V CharacteristicsBell System Technical Journal, 1968
- Current transport in metal-semiconductor barriersSolid-State Electronics, 1966
- Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structuresSolid-State Electronics, 1965
- Photoelectric Determination of the Image Force Dielectric Constant For Hot Electrons in Schottky BarriersJournal of Applied Physics, 1964
- EQUALITY OF THE TEMPERATURE DEPENDENCE OF THE GOLD_SILICON SURFACE BARRIER AND THE SILICON ENERGY GAP IN Au n-TYPE Si DIODESApplied Physics Letters, 1964
- Metal—Semiconductor Barrier Height Measurement by the Differential Capacitance Method—One Carrier SystemJournal of Applied Physics, 1963