Polysilicon recrystallization by CO2 laser heating of SiO2
- 1 September 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (5) , 421-422
- https://doi.org/10.1063/1.92759
Abstract
CO2 laser emission matches the absorption of optical phonons in SiO2. This fact was used to couple the laser energy into a layer of SiO2 (510 nm) deposited over polysilicon (225 nm), which was deposited on thermally grown SiO2 (860 nm). In this manner, recrystallization of the polysilicon was achieved with a mosaic pattern of grains having sizes in the 1–30‐μm range.Keywords
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