Monolithic integration of GaAs/AlGaAs LED and Si driver circuit
- 1 October 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (10) , 512-514
- https://doi.org/10.1109/55.17828
Abstract
A GaAs/AlGaAs LED has been monolithically integrated with a Si driver circuit composed of ten MOSFETs. The LED replaces the output pad of a 2- mu m design rule, standard Si output buffer circuit, so that the overall area remains the same. By applying a stream of voltage pulses to the input of the driver circuit, the LED output has been modulated at rates exceeding 100 MHz.<>Keywords
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