Initial Stage of SiO2/Si Interface Formation on Si(111) Surface
- 1 May 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (5B) , L638
- https://doi.org/10.1143/jjap.31.l638
Abstract
The initial stages of SiO2/Si interface formation on a Si(111) surface were investigated at 300°C in dry oxygen with a pressure of 133 Pa. It was found that the SiO2/Si interfacial transition layer is formed in three steps characterized by three different oxidation rates.Keywords
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