Monte Carlo calculation of the thermalization of atoms sputtered from the cathode of a sputtering discharge
- 1 May 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (9) , 3671-3679
- https://doi.org/10.1063/1.342593
Abstract
The Monte Carlo technique has been used to simulate the thermalization of sputtered atoms in the filling or background gas within a planar sputtering discharge. The model uses Thompson’s theoretical distribution of the energy of atoms sputtered from the cathode surface together with an approximation to the 6–12 Lennard–Jones potential to describe collisions between sputtered atoms and background gas atoms. The diffusion of the thermalized atoms is included explicitly in the Monte Carlo calculations. The velocity distribution of sputtered atoms between the cathode and substrate is calculated, from which their average kinetic energy is determined as a function of the product Pd, where P is the background gas pressure and d is the distance from the cathode. Because of the effect of the finite cathode-substrate separation on back diffusion, it was found that PD, where D is the cathode-to-substrate separation, is an important parameter in describing thermalization and, consequently, the average energy of sputtered atoms throughout the discharge. These calculations are compared with theoretical analyses of other workers and show good agreement with experimental results.This publication has 15 references indexed in Scilit:
- Stress and microstructure of sputter-deposited thin films: Molecular dynamics investigationsJournal of Applied Physics, 1987
- An interferometric investigation of the thermalization of copper atoms in a magnetron sputtering dischargeJournal of Applied Physics, 1986
- Ion-based methods for optical thin film depositionJournal of Materials Science, 1986
- The thermalization of energetic atoms during the sputtering processJournal of Vacuum Science & Technology A, 1984
- Evolution towards thermalization, and diffusion, of sputtered particle fluxes: Spatial profilesJournal of Applied Physics, 1984
- Slowing down and thermalization of sputtered particle fluxes: Energy distributionsJournal of Applied Physics, 1983
- On resolving the anomaly of indium-tin oxide silicon junctionsIEEE Electron Device Letters, 1981
- Calculation of deposition rates in diode sputtering systemsJournal of Vacuum Science and Technology, 1978
- Selective thermalization in sputtering to produce high TcfilmsIEEE Transactions on Magnetics, 1975
- II. The energy spectrum of ejected atoms during the high energy sputtering of goldPhilosophical Magazine, 1968