Influence of temperature on the formation by reactive CVD of a silicon carbide buffer layer on silicon
- 1 April 1993
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 185 (1-4) , 79-84
- https://doi.org/10.1016/0921-4526(93)90217-t
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
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