Photoluminescence properties of ZnO epitaxial layers grown on lattice-matched ScAlMgO4 substrates
- 27 November 2002
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 92 (12) , 7157-7159
- https://doi.org/10.1063/1.1519336
Abstract
Photoluminescence (PL) properties of ZnO films grown epitaxially on lattice-matched substrates are investigated. PL spectra of ZnO layers measured at 5 K are dominated by neutral-acceptor bound exciton emission at 3.359 eV with a linewidth of 0.8 meV. Free exciton emission develops as temperature is raised and eventually dominates at temperatures higher than 120 K. Temperature dependence of intensity of the free exciton emission is discussed.
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