Investigation of the influence of ramped voltage stress on intrinsic tbd of MOS gate oxides
- 1 July 1997
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 41 (7) , 1013-1020
- https://doi.org/10.1016/s0038-1101(97)00015-4
Abstract
No abstract availableKeywords
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