Dynamical mean-field studies of metal-insulator transitions

Preprint

23 June 1997

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/9706231

Abstract

We discuss the successes of the dynamical mean field (DMF) approach to metal insulator transitions in both the clean and the disordered limit. In the latter case, standard DMF equations are generalized in order to incorporate both the physics of strong correlation and Anderson localization effects. The results give new insights into the puzzling features of doped semiconductors.

Keywords

METAL INSULATOR TRANSITIONS
DYNAMICAL MEAN FIELD
CORRELATION
MEAN FIELD
DMF

All Related Versions

Version 1, 1997-06-23, ArXiv
Published version: Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, 356 (1735), 57.

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