Dynamical mean–field studies of metal–insulator transitions
Open Access
- 15 January 1998
- journal article
- Published by The Royal Society in Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences
- Vol. 356 (1735) , 57-74
- https://doi.org/10.1098/rsta.1998.0149
Abstract
We discuss the successes of the dynamical mean–field (DMF) approach to metal–insulator transitions in both the clean and the disordered limit. In the latter case, standard DMF equations are generalized in order to incorporate both the physics of strong correlation and Anderson localization effects. The results give new insights into the puzzling features of doped semiconductors.Keywords
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