Distribution of the density of states of bonded hydrogen in amorphous hydrogenated silicon
- 31 May 1991
- journal article
- Published by Elsevier in Solar Cells
- Vol. 30 (1-4) , 207-218
- https://doi.org/10.1016/0379-6787(91)90052-q
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Evidence for the defect pool concept for Si dangling bond states in a-Si:H from experiments with thin film transistorsJournal of Non-Crystalline Solids, 1989
- The defect density in amorphous siliconPhilosophical Magazine Part B, 1989
- Defect equilibria in undopeda-Si:HPhysical Review B, 1989
- Hydrogen-mediated model for defect metastability in hydrogenated amorphous siliconPhysical Review B, 1989
- The origin of metastable states in a-Si:HSolar Cells, 1988
- Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous siliconPhysical Review Letters, 1987
- Thermal-equilibrium processes in amorphous siliconPhysical Review B, 1987
- Hydrogenated microvoids and light-induced degradation of amorphous-silicon solar cellsApplied Physics A, 1986
- Light-induced metastable defects in hydrogenated amorphous silicon: A systematic studyPhysical Review B, 1985
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977