Evidence for the defect pool concept for Si dangling bond states in a-Si:H from experiments with thin film transistors
- 1 December 1989
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 114, 642-644
- https://doi.org/10.1016/0022-3093(89)90676-5
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- The origin of metastable states in a-Si:HSolar Cells, 1988
- a-Si:H gap states investigated by CPM and SCLCJournal of Non-Crystalline Solids, 1987
- Creation of near-interface defects in hydrogenated amorphous silicon-silicon nitride heterojunctions: The role of hydrogenPhysical Review B, 1987
- Resolution of amorphous silicon thin-film transistor instability mechanisms using ambipolar transistorsApplied Physics Letters, 1987
- Instability mechanism in hydrogenated amorphous silicon thin-film transistorsApplied Physics Letters, 1987
- Analysis of field-effect-conductance measurements on amorphous semiconductorsPhilosophical Magazine Part B, 1981