Nonplanar and noncontinuous buried layers of SiO2 in silicon formed by ion beam synthesis

This publication has 5 references indexed in Scilit:

• Dielectrically isolated silicon-on-insulator islands by masked oxygen implantation
  Applied Physics Letters, 1987
• Novel dielectric/silicon planar structures formed by ion beam synthesis
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
• The evolution of the Si/SiO2 interface in buried oxide layers formed by high dose oxygen implantation into silicon
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
• SIMS and 18O tracer studies of the redistribution of oxygen in buried SiO 2 layers formed by high dose implantation
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
• A Monte Carlo computer program for the transport of energetic ions in amorphous targets
  Nuclear Instruments and Methods, 1980