Tin-doping ofn + InP OMVPE layers
- 1 May 1991
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 20 (5) , 365-372
- https://doi.org/10.1007/bf02670885
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- ‘‘Absolute’’ deformation potentials: Formulation andab initiocalculations for semiconductorsPhysical Review Letters, 1989
- Lattice Compression from Conduction Electrons in Heavily Doped Si:AsPhysical Review Letters, 1988
- A comparison of IV and VI n-dopants for MOVPE-grown InPJournal of Crystal Growth, 1987
- The Hall effect in III-V semiconductor assessmentSemiconductor Science and Technology, 1986
- The incorporation of tin in indium phosphideJournal of Crystal Growth, 1984
- Tin incorporation in GaAs layers grown by low pressure MOVPEJournal of Crystal Growth, 1984
- Tin doping of MOVPE grown gallium arsenide using tetraethyltinJournal of Crystal Growth, 1984
- Determination of the lattice constant of epitaxial layers of III-V compoundsJournal of Crystal Growth, 1978
- Indium PhosphideJournal of the Electrochemical Society, 1973
- Lattice match in the heteroepitaxy of III-V compound alloysJournal of Applied Physics, 1972