Low-threshold single-quantum-well InGaAs/GaAs lasers grown by metal-organic chemical vapor deposition on structure substrates
- 1 March 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 4 (3) , 209-212
- https://doi.org/10.1109/68.122368
Abstract
Low-threshold current (as low as 3.0 mA) and high-external efficiency ( approximately=88%) InGaAs/GaAs lasers emitting at 1 mu m under a stable fundamental transverse mode were obtained by using the temperature engineered growth technique for the growth on prepatterned substrates.Keywords
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