Photoluminescence study of critical thickness of pseudomorphic quantum wells grown on small area mesa stripes
- 18 February 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (7) , 717-719
- https://doi.org/10.1063/1.104525
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Reduction in misfit dislocation density by the selective growth of Si1−xGex/Si in small areasApplied Physics Letters, 1990
- Dependence of threshold current density on quantum well composition for strained-layer InGaAs-GaAs lasers by metalorganic chemical vapor depositionApplied Physics Letters, 1989
- Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth areaJournal of Applied Physics, 1989
- Band structure engineering of semiconductor lasers for optical communicationsJournal of Lightwave Technology, 1988
- Graded-index separate-confinement InGaAs/GaAs strained-layer quantum well laser grown by metalorganic chemical vapor depositionApplied Physics Letters, 1986
- An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMTIEEE Electron Device Letters, 1985
- Defects associated with the accommodation of misfit between crystalsJournal of Vacuum Science and Technology, 1975
- Defects in epitaxial multilayersJournal of Crystal Growth, 1974