High Speed Metal–Oxide–Semiconductor Capacitor-Based Silicon Optical Modulators
- 1 August 2006
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 45 (8S) , 6603-6608
- https://doi.org/10.1143/jjap.45.6603
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Micrometre-scale silicon electro-optic modulatorNature, 2005
- High speed silicon Mach-Zehnder modulatorOptics Express, 2005
- A sub-micron depletion-type photonic modulator in Silicon On InsulatorOptics Express, 2005
- A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitorNature, 2004
- Optical transmission losses in polycrystalline silicon strip waveguides: Effects of waveguide dimensions, thermal treatment, hydrogen passivation, and wavelengthJournal of Electronic Materials, 2000
- Fully packaged, broad-band LiNbO3 modulator with low drive voltageIEEE Photonics Technology Letters, 2000
- Silicon Mach–Zehnder waveguide interferometers based on the plasma dispersion effectApplied Physics Letters, 1991
- Silicon Mach-Zehnder waveguide interferometers operating at 1.3 μmElectronics Letters, 1991
- Electrooptical effects in siliconIEEE Journal of Quantum Electronics, 1987
- All-silicon active and passive guided-wave components for λ = 1.3 and 1.6 µmIEEE Journal of Quantum Electronics, 1986