Magnetostatic Interactions between Thin Magnetic Films

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Abstract
This paper discusses some magnetostatic interactions between two thin films that are separated by a small distance between parallel film planes. The external field of a domain wall in one film is calculated using a simple wall model, and the effect of this field on a second adjacent film is determined. The conditions are investigated under which the wall field of the first film together with an external field can cause nucleation of a domain in the second film. The interaction energy between a movable wall in one film and a stationary wall or a linear imperfection in a second adjacent film is calculated using simple models. The equilibrium position of the movable wall as a function of an externally applied field is then determined. Means for electrically modifying the degree of interaction are investigated. Experimental results are presented illustrating the aforementioned interactions. The nucleation of long narrow domains in one film is achieved by the use of a domain wall, a scratch imperfection, or a film edge in a second adjacent film. The influence of a stationary wall in one film on the controlled wall motion of a wall in a second film is demonstrated. A comparison of theory and experiment is made. Mention is made of how the subject interactions might be utilized in new information storage devices.

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