Simultaneous observation of Rutherford scattering and ( α,X) reactions in AlF3and MgF2layers and correlation with their electrical properties
- 21 June 1975
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 8 (9) , 1008-1020
- https://doi.org/10.1088/0022-3727/8/9/006
Abstract
An analysis, by nuclear methods, of AF3 and MgF2 thin films has been made using 2.5 MeV He+; backscattered alpha -particles and K X-rays emitted in ( alpha ,X) reactions are observed. The impurity concentrations are strongly dependent on the conditions of preparation and can reach high values. Electrical properties of such thin films appear to be nearly independent of the impurity concentrations and are discussed in the framework of the Mott-Davis model.Keywords
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