Range Profiles of 10 to 380 keV120Sn and133Cs in amorphous silicon
- 1 January 1985
- journal article
- Published by Taylor & Francis in Radiation Effects
- Vol. 90 (1) , 103-110
- https://doi.org/10.1080/00337578508222522
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Effective stopping-power charges of swift ions in condensed matterPhysical Review B, 1982
- Ranges of energetic ions in matterPhysical Review A, 1981
- Z1 oscillations in low energy heavy ion rangesNuclear Instruments and Methods, 1980
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980
- Z1-oscillations in low-energy heavy-ion rangesNuclear Instruments and Methods, 1980
- Experimental study of effective interatomic potentialsPhysical Review A, 1979
- Heavy ion ranges in aluminium and siliconRadiation Effects, 1978
- Calculations of nuclear stopping, ranges, and straggling in the low-energy regionPhysical Review B, 1977
- Calculation of energy straggling for protons and helium ionsPhysical Review A, 1976
- The application of high resolution rutherford backscattering to the measurement of ion ranges in Si and AlRadiation Effects, 1975