High-magnetic-field and high-hydrostatic-pressure investigation of hydrogenic- and resonant-impurity states inn-type indium arsenide

Hall-effect and transverse-magnetoresistance measurements were performed on pure n-type InAs samples (n≃2×${10}^{16}$ ${\mathrm{cm}}^{\mathrm{-}3}$) under magnetic fields up to 180 kG and hydrostatic pressures up to 18 kbar in the temperature range 2.7–8 K. At P13 kbar, additional magnetic freezeout into a resonant-impurity level was observed. This resonant level lies at 68±1 meV above the Γ conduction band and moves with pressure at the rate of -4 meV/kbar with respect to this minimum. An extra deepening of the shallow-donor level takes place when the pressure and the magnetic field are sufficiently high to induce the occupation of the resonant states.