Fine structure of a bound multiexciton complex in CdTe

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Abstract
We report fine structure in the luminescence of a bound multiexciton complex in CdTe. Data obtained from temperature-dependent, power-dependent, and time-resolved photoluminescence spectroscopy are all consistent with the interpretation that the complex is comprised of a biexciton bound to a neutral acceptor. The fine structure of the biexciton luminescence transition consists of a doublet that is due to a splitting in the bound-exciton final state. These data conclusively demonstrate the existence of a bound multiexciton complex in a direct-gap semiconductor.