Vibrational and photoemission study of the interface between phenyl diamine and indium tin oxide
- 3 September 2001
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (10) , 1561-1563
- https://doi.org/10.1063/1.1399314
Abstract
High-resolution electron-energy-loss spectroscopy (HREELS) and ultraviolet photoemission (UPS) measurements of the interface of phenyl diamine (NPB) and indium tin oxide (ITO) were performed. The HREELS spectrum of the oxygen-plasma-treated ITO was characterized by dipolar-active-phonon modes at 71 and 134 meV. Upon deposition of NPB on ITO, the HREELS loss peaks of ITO gradually diminished, while the NPB-derived loss peaks appeared. The negligible energy shifts of the NPB peaks with NPB thickness suggested a rather weak interaction between NPB and ITO. The remarkable intensity change of the loss band at 71–65 meV gave evidence for a strong vibrational coupling between the ITO phonon mode at 71 meV and the NPB-derived vibrational mode at 65 meV. Annealing of the NPB/ITO interface with 20 Å of NPB resulted in the decoupling of the two vibrational modes, presumably due to crystallization of the NPB overlayer. UPS measurements showed a sharp decrease in work function at the initial NPB deposition, which is attributable to a dipole layer formed at the interface.Keywords
This publication has 17 references indexed in Scilit:
- Improvement of organic electroluminescent device performance by in situ plasma treatment of indium–tin-oxide surfaceJournal of Luminescence, 2000
- Vibrational structure of ultrathin 8-hydroxyquinoline aluminum films studied by high-resolution electron-energy-loss spectroscopyPhysical Review B, 1999
- Combined photoemission/in vacuo transport study of the indium tin oxide/copper phthalocyanine/N,N′-diphenyl-N,N′-bis(l-naphthyl)-1,1′biphenyl-4,4″diamine molecular organic semiconductor systemJournal of Applied Physics, 1999
- Reduced operating voltage of organic electroluminescent devices by plasma treatment of the indium tin oxide anodeApplied Physics Letters, 1999
- Organic electroluminescent devices by high-temperature processing and crystalline hole transporting layerApplied Physics Letters, 1999
- Interfacial electronic structures in an organic light-emitting diodeApplied Physics Letters, 1999
- Surface modification of indium tin oxide by plasma treatment: An effective method to improve the efficiency, brightness, and reliability of organic light emitting devicesApplied Physics Letters, 1997
- Effects of Plasma Modification on Hole Transport Layer in Organic Electroluminescent DiodeJapanese Journal of Applied Physics, 1995
- Light-emitting diodes based on conjugated polymersNature, 1990
- Electroluminescence of doped organic thin filmsJournal of Applied Physics, 1989