Epitaxial GaN on Si(111): Process control of SiNx interlayer formation
- 29 June 2004
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 85 (1) , 133-135
- https://doi.org/10.1063/1.1771803
Abstract
The heteroepitaxialgrowth of (0001) GaNthin films directly on (111) Si by laser-molecular beam epitaxy without the formation of a Si N x interlayer at the Ga N ∕ Si interface is reported. We also find that Si N x can be formed subsequently as a result of nitrogen diffusion to the Ga N ∕ Si ( 111 ) interface. The orientation relationship of GaN on Si(111) was determined using x-ray diffraction and selected area electron diffraction. The atomic structure of the interfaces was studied by high resolution transmission electron microscopy. A Fourier filtered image of the cross-sectional Ga N ∕ Si ( 111 ) interface demonstrated domain matching epitaxy of 6:5. Distributions of N and Ga concentrations near the Ga N ∕ Si interface were determined using electron energy loss spectroscopy.Keywords
This publication has 9 references indexed in Scilit:
- Domain epitaxy: A unified paradigm for thin film growthJournal of Applied Physics, 2003
- Comparison of GaN epitaxial films on silicon nitride buffer and Si(111)Solid-State Electronics, 2002
- Thermal nitridation of the Si(111)-(7×7) surface studied by scanning tunneling microscopy and spectroscopyPhysical Review B, 2002
- Influence of substrate nitridation before growth on initial growth process of GaN heteroepitaxial layers grown on Si(0 0 1) and Si(1 1 1) substrates by ECR-MBEJournal of Crystal Growth, 2001
- Growth of high quality GaN layers with AlN buffer on Si(111) substratesJournal of Crystal Growth, 2001
- Epitaxial growth of AlN and GaN on Si(111) by plasma-assisted molecular beam epitaxyJournal of Crystal Growth, 1999
- GaN heteroepitaxial growth on silicon nitride buffer layers formed on Si (111) surfaces by plasma-assisted molecular beam epitaxyApplied Physics Letters, 1998
- Thermodynamic and kinetic processes involved in the growth of epitaxial GaN thin filmsApplied Physics Letters, 1993
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992