Growth of high quality GaN layers with AlN buffer on Si(111) substrates

This publication has 13 references indexed in Scilit:

• HF-chemical etching of the oxide layer near a SiO2/Si(111) interface
  Applied Physics Letters, 1998
• GaN heteroepitaxial growth on silicon nitride buffer layers formed on Si (111) surfaces by plasma-assisted molecular beam epitaxy
  Applied Physics Letters, 1998
• Visible-blind GaN Schottky barrier detectors grown on Si(111)
  Applied Physics Letters, 1998
• Ultraviolet and violet GaN light emitting diodes on silicon
  Applied Physics Letters, 1998
• Nucleation of AlN on the (7×7) Reconstructed Silicon (1 1 1) Surface
  MRS Internet Journal of Nitride Semiconductor Research, 1998
• GaN growth on Si(111) substrate using oxidized AlAs as an intermediate layer
  Applied Physics Letters, 1997
• High quality GaN–InGaN heterostructures grown on (111) silicon substrates
  Applied Physics Letters, 1996
• High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substrates
  Applied Physics Letters, 1995
• The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer
  Journal of Crystal Growth, 1993
• Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer
  Journal of Crystal Growth, 1991