Nucleation of AlN on the (7×7) Reconstructed Silicon (1 1 1) Surface
- 1 January 1998
- journal article
- Published by Springer Nature in MRS Internet Journal of Nitride Semiconductor Research
Abstract
The (7×7) reconstructed (1 1 1) surface of silicon is found to be an excellent surface for the nucleation of epitaxial aluminum nitride, despite the +23.4% misfit in the AlN/Si system. AlN nucleated above the (7×7) to (1×1) transition temperature (830°C) is found to contain 30° misoriented grains, while films nucleated below the transition temperature are single orientation. Optimized aluminum nitride films grown on (7×7) silicon surfaces make excellent substrates for GaN heteroepitaxy.Keywords
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