0.12-μm gate III-V nitride HFET's with high contact resistances
- 1 April 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 18 (4) , 141-143
- https://doi.org/10.1109/55.563309
Abstract
HFET's with 0.12-/spl mu/m gate length were fabricated on a III-V nitride wafer. The contact resistance from unannealed Ti/Au ohmic contact was 10 /spl Omega//spl middot/mm. Even with this relatively high contact resistance, f/sub T/ of 46.9 GHz and f/sub max/ of 103 GHz were measured with the Ti/Au contacts, the highest yet achieved on III-V nitride FETs. The improvement in the frequency response was mainly due to the decrease in the gate length (0.12 /spl mu/m). In addition, the effects of high contact resistances at high frequency are discussed.Keywords
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