Epitaxial growth of cubic GaN and AlN on Si(001)
- 1 January 1996
- journal article
- Published by Springer Nature in MRS Internet Journal of Nitride Semiconductor Research
Abstract
Thermal treatment under propane at 1300-1400 °C has been used to prepare Silicon (001) wafers for subsequent growth of cubic GaN and AlN by Electron Cyclotron Resonance Plasma Assisted Molecular Beam Epitaxy (ECRMBE). Thermal treatment of Silicon wafers under propane, used in this experiment, produced a very thin (40 Å) layer of cubic SiC on the Silicon (001) surface. Despite an extremely low thickness of as-produced SiC layer, high quality cubic GaN has been successfully grown. The cubic form of AlN grown on the SiC(40Å)/Si(001) surface has also been observed despite a very high density of stacking faults.Keywords
This publication has 9 references indexed in Scilit:
- Compact electron cyclotron resonance plasma source for molecular beam epitaxy applicationsJournal of Vacuum Science & Technology A, 1996
- Epitaxial growth of cubic AlN films on (100) and (111) silicon by pulsed laser ablationApplied Physics Letters, 1995
- How to induce the epitaxial growth of gallium nitride on Si(001)Materials Science and Engineering: B, 1995
- Epitaxial growth of cubic and hexagonal GaN by gas source molecular beam epitaxy using a microwave plasma nitrogen sourceJournal of Crystal Growth, 1994
- Growth of GaN by ECR-assisted MBEPhysica B: Condensed Matter, 1993
- Heteroepitaxial wurtzite and zinc-blende structure GaN grown by reactive-ion molecular-beam epitaxy: Growth kinetics, microstructure, and propertiesJournal of Applied Physics, 1993
- Epitaxial growth and characterization of zinc-blende gallium nitride on (001) siliconJournal of Applied Physics, 1992
- An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Growth of cubic phase gallium nitride by modified molecular-beam epitaxyJournal of Vacuum Science & Technology A, 1989