High-Mobility and High-Stability a-Si:H Thin Film Transistors with Smooth SiNx/a-Si Interface
- 1 December 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (12S) , 3691
- https://doi.org/10.1143/jjap.30.3691
Abstract
Through use of an atomic force microscope (AFM), surface morphologies for SiN x and a-Si:H films were investigated. By controlling deposition conditions, very smooth films have been obtained. The thin film transistor (TFT) with smooth a-Si:H on smooth SiN x has both high mobility (1.0 cm2·V-1·s-1) and high stability at the same time. This high-performance TFT will make an important impact in application to high-pixel-density liquid crystal displays (LCDs), such as for use in workstations and high-definition television (HDTV).Keywords
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