The Correlation between Photocreation of Dangling Bonds and Si-H Bond Clusters in a-Si:H
- 1 September 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (9A) , L1582
- https://doi.org/10.1143/jjap.29.l1582
Abstract
The correlation between photocreation of dangling bonds and clustered Si-H bonds in a-Si:H is discussed in terms of a model which takes into account the self-trapping of holes in a weak bond adjacent to a Si-H bond.Keywords
This publication has 15 references indexed in Scilit:
- The Role of Self-Trapped Holes in the Photoercation of Dangling Bonds in a-Si:HJapanese Journal of Applied Physics, 1989
- The Influence of the Si-H2 Bond on the Light-Induced Effect in a-Si Films and a-Si Solar CellsJapanese Journal of Applied Physics, 1989
- Microscopic Mechanism for the Photo-Creation of Dangling Bonds in a-Si:HJapanese Journal of Applied Physics, 1988
- Microscopic Mechanism for Annealing of Photocreated Dangling Bonds in a-Si:HJapanese Journal of Applied Physics, 1988
- Hydrogen microstructure in amorphous hydrogenated siliconPhysical Review B, 1987
- Light-Induced Effects and Their Annealing Behavior in a-Si:HJapanese Journal of Applied Physics, 1986
- The Role of Hydrogen in the Staebler-Wronski Effect of a-Si:HJapanese Journal of Applied Physics, 1985
- Photo‐Induced Metastable Effects in Hydrogenated Amorphous Silicon (a‐Si:H)Annalen der Physik, 1985
- Luminescence fatigue and light-induced electron spin resonance in amorphous silicon-hydrogen alloysSolar Energy Materials, 1982
- New Evidence for Defect Creation by High Optical Excitation in Glow Discharge Amorphous SiliconJapanese Journal of Applied Physics, 1980