The Role of Self-Trapped Holes in the Photoercation of Dangling Bonds in a-Si:H
- 1 December 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (12A) , L2128-2130
- https://doi.org/10.1143/jjap.28.l2128
Abstract
We consider the creation of dangling bonds by low-temperature illumination in a-Si:H. It is found that self-trapping of holes in weak bonds adjacent to Si:H bonds plays an important role in the photocreation of dangling bonds.Keywords
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