Light-Induced Effects and Their Annealing Behavior in a-Si:H
- 1 August 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (8A) , L654-656
- https://doi.org/10.1143/jjap.25.l654
Abstract
It is found from ESR measurements in a-Si:H films that dangling bonds created by short-time illumination can be removed by short-time annealing and that photo-created dangling bonds removed by short-time annealing can be recovered by short-time illumination. Combining these results with temperature dependence of illumination effects for two kinds of films prepared at 100°C and 250°C, a mechanism of the photo-creation of dangling bonds is proposed. The illumination effect on photoconductivity and photoluminescence is also compared with that on ESR.Keywords
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