Photo‐Induced Metastable Effects in Hydrogenated Amorphous Silicon (a‐Si:H)
- 1 January 1985
- journal article
- Published by Wiley in Annalen der Physik
- Vol. 497 (2) , 187-197
- https://doi.org/10.1002/andp.19854970213
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Activated transport in amorphous semiconductors. I. The theoretical approachJournal of Physics C: Solid State Physics, 1984
- Study of light-induced creation of defects in a-Si:H by means of single and dual-beam photoconductivityJournal of Non-Crystalline Solids, 1983
- Effect of surface oxide on transport properties in a-Si:HJournal of Non-Crystalline Solids, 1983
- Optically induced excess conductivity in compensated a-Si:H filmsJournal of Non-Crystalline Solids, 1983
- Effects of prolonged illumination on the properties of hydrogenated amorphous siliconSolar Energy Materials, 1982
- Optically Induced Potential Fluctuations in a‐Si:H FilmsPhysica Status Solidi (b), 1982
- Field Effect in a‐Si:H Films. Influence of Annealing and Light ExposurePhysica Status Solidi (b), 1982
- Study of Gap States in a-Si:H by Transient Current SpectroscopyPublished by Springer Nature ,1982
- Proton spin-lattice relaxation in plasma-deposited amorphous silicon-hydrogen filmsPhysical Review B, 1981
- Drift Mobility and Photoconductivity in Amorphous SiliconPhysica Status Solidi (b), 1978