Optically induced excess conductivity in compensated a-Si:H films
- 1 December 1983
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 59-60, 405-408
- https://doi.org/10.1016/0022-3093(83)90606-3
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Determination of the hydrogen diffusion coefficient in hydrogenated amorphous silicon from hydrogen effusion experimentsJournal of Applied Physics, 1982
- Effects of prolonged illumination on the properties of hydrogenated amorphous siliconSolar Energy Materials, 1982
- Optically Induced Potential Fluctuations in a‐Si:H FilmsPhysica Status Solidi (b), 1982
- Influence of Boron doping on the transport properties of A-SI : H filmsSolid State Communications, 1981
- Light-induced dangling bonds in hydrogenated amorphous siliconApplied Physics Letters, 1981
- Optically induced conductivity changes in discharge-produced hydrogenated amorphous siliconJournal of Applied Physics, 1980